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| FDU6676AS September 2005 FDU6676AS General Description N-Channel PowerTrench(R) SyncFETTM 30V, 90A, 5.8m Features * RDS(ON) = 5.8m Max, VGS = 10V * RDS(ON) = 7.3m Max, VGS = 4.5V * High performance trench technology for extremely low RDS(ON) * Low Gate Charge * High power and current handling capability * Includes SyncFET Schottky diode The FDU6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDU6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild's monolithic SyncFET technology. Applications * DC/DC converter D I-PAK (TO-251AA) GDS G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous (Note 1a) Ratings 30 20 90 100 (Note 1) (Note 1a) (Note 1b) Units V V A W -Pulsed Power Dissipation for Single Operation 70 3.1 1.3 -55 to +150 TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance junction to Case Thermal Resistance junction to Ambient Thermal Resistance junction to Ambient (Note 1) (Note 1a) (Note 1b) 1.8 45 96 C/W Package Marking and Ordering Information Device Marking FDU6676AS FDU6676AS FDU6676AS Device FDU6676AS FDU6676AS_NL (Note 4) FDU6676AS_F071 (Note 5) Package I-PAK (TO-251) I-PAK (TO-251) I-PAK (TO-251) Reel Size Tube Tube Tube Tape width N/A N/A N/A Quantity 75 75 75 FDU6676AS Rev. A(W)) (c)2005 Fairchild Semiconductor Corporation FDU6676AS Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions Single Pulse, VDD = 15V,ID = 16A Min Typ Max 108 250 16 Units mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) VGS = 0 V, ID = 250 A 30 29 500 13 100 1 1.5 -4 4.8 5.8 7.7 67 3 V mV/C A mA nA ID = 250 A,Referenced to 25C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=125C VGS = 20 V, VDS = 0 V ID = 250 A VDS = VGS, ID = 250 A,Referenced to 25C VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 16 A,TJ=125C VDS = 10 V, ID = 16 A On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance V mV/C m 5.8 7.3 9.6 gFS Ciss Coss Crss RG td(on) tr td(off) tf td(on) tr td(off) tf Qg Qg Qgs Qgd S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2470 710 260 1.8 pF pF pF 22 22 80 40 32 38 54 42 64 35 ns ns ns ns ns ns ns ns nC nC nC nC VGS = 100 mV, f = 1.0 MHz Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time 12 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 12 50 25 20 VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 24 34 26 46 VDS = 15V, ID = 16 A 25 6 7 Total Gate Charge, VGS = 10V Total Gate Charge, VGS = 5V Gate-Source Charge Gate-Drain Charge FDU6676AS Rev A (W) FDU6676AS Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max 2.3 0.4 28 19 1.2 Units A V ns nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward (Note 2) VGS = 0 V, IS = 2.3 A Voltage dIF/dt = 100 A/s IF = 16 A, Diode Reverse Recovery Time Diode Reverse Recovery Charge Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 45C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. FDU6676AS_NL is a lead free product. The FDU6676AS_NL marking will appear on the reel label. 5. FDU6676AS_F071 is a lead free product. The FDU6676AS_F071 marking will appear on the reel label. FDU6676AS Rev A (W) FDU6676AS Typical Characteristics 100 VGS = 10V 6.0V 3.5V 4.0V 4.5V 2 VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 3.5V 4.0V 4.5V 6.0V 10V ID, DRAIN CURRENT (A) 80 60 3.0V 40 20 2.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 0 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.0175 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 16A VGS = 10V ID = 8A 0.015 0.0125 0.01 0.0075 TA = 25 C 0.005 0.0025 o 1.4 1.2 TA = 125 C o 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature 100 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V VGS = 0V 80 ID, DRAIN CURRENT (A) 10 1 0.1 0.01 60 TA = 125 C 25oC -55 C o o 40 TA =125 C -55oC o 20 25oC 0.001 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0.0001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDU6676AS Rev A (W) FDU6676AS Typical Characteristics 10 3500 ID = 16A VGS, GATE-SOURCE VOLTAGE (V) 3000 CAPACITANCE (pF) VDS = 10V 20V 8 f = 1MHz VGS = 0 V 2500 Ciss 6 15V 4 2000 1500 Coss 1000 500 Crss 2 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics 100 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100s 1m 10ms 100ms 1s 10s DC 80 SINGLE PULSE RJA = 96C/W TA = 25C 10 60 1 VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25 C o 40 0.1 20 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 96 C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDU6676AS Rev A (W) FDU6676AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDU6676AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 125oC 0.01 100oC 0.001 CURRENT : 0.8A/div 0.0001 25oC 0.00001 0 10 20 VDS, REVERSE VOLTAGE (V) 30 Figure 14. SyncFET Body Diode Reverse Leakage Versus Drain-Source Voltage and Temperature. TIME : 12.5ns/div Figure 12. FDU6676AS SyncFET Body Diode Reverse Recovery Characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDU6676A). CURRENT : 0.8A/div TIME : 12.5ns/div Figure 13. Non-SyncFET (FDU6676A) Body Biode Reverse Recovery Characteristic. FDU6676AS Rev A (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 |
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